FDS9936A transistor equivalent, dual n-channel enhancement mode field effect transistor.
5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V, RDS(ON) = 0.060 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capabili.
such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance .
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimiz.
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